Friday, September 3, 2010
Transistors made from graphene has reached 300GHz
A team from the University of California at Los Angeles announced that it managed to build a transistor by graphene, which operates at speeds that can reach the silicon. The speedometer stopped at 300GHz, a number nearly double the performance of silicone. Theoretically, the rate may rise significantly and reach up to 1THz. According to researchers, beyond the speed, the construction of such a transistor has higher costs of production from materials currently used.
Of course, building a high performance transistor is far from a processor made by graphene. There is still a long way for researchers and a number of obstacles to overcome. For example, one of the big bets is to get graphene to satisfactory levels of resistance.